ROHM Semiconductor QS6Z5TR BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣອດ PNP+NPN ທຣານຊິສຕໍເຣອດຂັບເຄື່ອງ

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.25 W

DC Current Gain hFE Max: 450 at 50 mA, 2 V

Gain Bandwidth Product fT: 360 MHz, 400 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 180 at 50 mA, 2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 350 mV, 400 mV