ROHM Semiconductor SCS215AEGC11 ດາຍໂອດ Schottky Silicon Carbide DIODE 650 THD, SILICON

Technology: SiC

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 15 A

Ir - Reverse Current: 300 uA

Vf - Forward Voltage: 1.55 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 110 W

Ifsm - Forward Surge Current: 52 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 650 V