ROHM Semiconductor UT6MA2TCR MOSFETs UT6MA2 ແມ່ນ MOSFET ປະເພດຕັກຢ່າງພື້ນຜິວຂະໜາດນ້ອຍ ທີ່ເໝາະສົມສໍາລັບການນຳໃຊ້ໃນການສະຫນັບສະຫນູນການສະຫຼຸບສະຫຼອງ.

Fall Time: 4.1 ns, 13 ns

Rise Time: 7.7 ns, 9.1 ns

Technology: Si

Unit Weight: 771.020 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 4.3 nC, 6.7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns, 7.4 ns

Typical Turn-Off Delay Time: 13 ns, 26 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.7 S, 2.5 S

Rds On - Drain-Source Resistance: 46 mOhms, 70 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V