STMicroelectronics BCP53-16 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຕີ PNP ພະລັງງານກາງ

Width: 3.3 mm

Height: 1.8 mm

Length: 6.3 mm

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.6 W

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: - 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV