Texas Instruments CSD25485F5 MOSFETs -20-V P channel Nex FET power MOSFET s A 595-CSD25485F5T

Width: 0.77 mm

Height: 0.35 mm

Length: 1.53 mm

Fall Time: 14 ns

Rise Time: 6 ns

Technology: Si

Unit Weight: 0.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 3.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.4 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 27 ns

Id - Continuous Drain Current: 3.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7 S

Rds On - Drain-Source Resistance: 250 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V