Vishay General Semiconductor SI4559ADY-T1-E3 MOSFETs -60V Vds 20V Vgs SO-8 N&P ຄູ່

Fall Time: 10 ns, 30 ns

Rise Time: 65 ns, 70 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 20 nC, 22 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 3.1 W, 3.4 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns, 30 ns

Typical Turn-Off Delay Time: 15 ns, 40 ns

Id - Continuous Drain Current: 5.3 A, 3.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 15 S, 8.5 S

Rds On - Drain-Source Resistance: 58 mOhms, 120 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V