Vishay Siliconix SI7326DN-T1-E3 MOSFETs 30V 10A 1.5W

Width: 3.3 mm

Height: 1.04 mm

Length: 3.3 mm

Fall Time: 14 ns

Rise Time: 12 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.5 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 6.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 50 C

Forward Transconductance - Min: 16 S

Rds On - Drain-Source Resistance: 19.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V