Vishay Siliconix SIHF9520S-GE3 MOSFETs 100V Vds 20V Vgs D2PAK (TO-263)

Width: 9.65 mm

Height: 4.83 mm

Length: 10.67 mm

Fall Time: 25 ns

Rise Time: 29 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 18 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 60 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 29 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 6.8 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2 S

Rds On - Drain-Source Resistance: 600 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V