Vishay Siliconix SISS54DN-T1-GE3 MOSFETs POWRPK N CHAN 30V

Fall Time: 7 ns

Rise Time: 7 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: TrenchFET Gen V Power MOSFET

Qg - Gate Charge: 47.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 65.7 W

Vgs - Gate-Source Voltage: - 12 V, + 16 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 28 ns

Id - Continuous Drain Current: 185.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 117 S

Rds On - Drain-Source Resistance: 1.06 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V