Advanced Linear Devices ALD1101BPAL MOSFET 双N沟道对

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: Through Hole

Transistor Type: 2 N-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 40 mA

Maximum Operating Temperature: + 70 C

Minimum Operating Temperature: 0 C

Rds On - Drain-Source Resistance: 50 Ohms, 50 Ohms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 400 mV