Advanced Linear Devices ALD1115MAL MOSFET 互补型 N沟道 & P沟道

Technology: Si

Unit Weight: 140 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 4.8 mA

Maximum Operating Temperature: + 70 C

Minimum Operating Temperature: 0 C

Forward Transconductance - Min: 0.0018 S, 0.00067 S

Rds On - Drain-Source Resistance: 500 Ohms

Vds - Drain-Source Breakdown Voltage: 12 V