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Technology: Si
Unit Weight: 1 g
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: Through Hole
Transistor Type: 1 N-Channel, 1 P-Channel
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Id - Continuous Drain Current: 4.8 mA, 2 mA
Maximum Operating Temperature: + 70 C
Minimum Operating Temperature: 0 C
Rds On - Drain-Source Resistance: 350 Ohms, 1.2 kOhms
Vds - Drain-Source Breakdown Voltage: 10 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
