Advanced Linear Devices ALD111933PAL 双路N沟MOSFET

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: Through Hole

Transistor Type: 2 N-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 6.9 mA

Maximum Operating Temperature: + 70 C

Minimum Operating Temperature: 0 C

Rds On - Drain-Source Resistance: 500 Ohms

Vds - Drain-Source Breakdown Voltage: 10 V

Vgs th - Gate-Source Threshold Voltage: 3.25 V