Advanced Linear Devices ALD210800PCL MOSFETs 精密 N沟道 EPAD CMOS MOSFET 阵列

Technology: Si

Unit Weight: 1.025 g

Channel Mode: Enhancement

Configuration: Quad

Mounting Style: Through Hole

Transistor Type: 4 N-Channel

Number of Channels: 4 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 80 mA

Maximum Operating Temperature: + 70 C

Minimum Operating Temperature: 0 C

Rds On - Drain-Source Resistance: 25 Ohms

Vds - Drain-Source Breakdown Voltage: 10.6 V

Vgs th - Gate-Source Threshold Voltage: 20 mV