Advanced Semiconductor, Inc. BLV21 射频双极功率射频晶体管

Technology: Si

Unit Weight: 10.608 g

Mounting Style: Screw Mount

Transistor Type: Bipolar Power

Operating Frequency: 175 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 36 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 1.75 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 5

Collector- Emitter Voltage VCEO Max: 35 V