Advanced Semiconductor, Inc. SD2932 射频功率MOSFET射频晶体管

Gain: 15 dB

Technology: Si

Unit Weight: 22.792 g

Output Power: 300 W

Configuration: Single

Mounting Style: SMD/SMT

Operating Frequency: 250 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 W

Vgs - Gate-Source Voltage: 5 V

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 5 mOhms

Vds - Drain-Source Breakdown Voltage: 125 V