Central Semiconductor 2N3117 TIN/LEAD 双极型晶体管 BJTs 60Vcbo 60Vceo 6.0V 50mA 360mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 360 mW

DC Current Gain hFE Max: 500 at 10 uA, 5 V

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 50 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100 at 1 uA, 5 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 350 mV