Central Semiconductor 2N3134 PBFREE 双极型晶体管 BJTs 50Vcbo 35Vceo 4.0Vebo 150mA 10pF

Unit Weight: 1.245 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 600 mW

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 35 V

Collector-Emitter Saturation Voltage: 600 mV