Central Semiconductor 2N3496 TIN/LEAD 双极晶体管 BJTs 80Vcbo 80Vceo 4.0Vebo 7.0pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 80 V

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 300 mV