Central Semiconductor 2N3700 PBFREE 双极型晶体管 NPN 放大器/开关

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.8 W

DC Current Gain hFE Max: 300 at 150 mA, 10 V

Gain Bandwidth Product fT: 400 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 140 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at 0.1 mA, 10 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 200 mV