Central Semiconductor 2N3713 PBFREE 双极型晶体管 NPN GP 功率

Unit Weight: 6.401 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 150 W

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1 V