Central Semiconductor 2N4104 PBFREE 双极型晶体管 BJTs JFET N沟道

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 30 mW

Gain Bandwidth Product fT: 540 MHz

Continuous Collector Current: 50 mA

DC Collector/Base Gain hfe Min: 1400 at 1 mA, 5 V

Collector- Emitter Voltage VCEO Max: 60 V