Central Semiconductor 2N5322 PBFREE 双极型晶体管 BJTs 100Vcbo 100Vcev 2A 75Vceo 6.0Vebo 10W

Unit Weight: 1.870 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 175

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 75 V

Collector-Emitter Saturation Voltage: 500 mV