Central Semiconductor 2N5770 PBFREE 双极型晶体管 NPN 射频放大器/振荡器

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 900 MHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 400 mV