Central Semiconductor 2N5817 TIN/LEAD 双极型晶体管 BJTs 50Vcbo 50Vces 40Vceo 5.0A 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 750 mA

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 750 mV