Central Semiconductor 2N5822 PBFREE 双极晶体管 BJTs 70Vcbo 70Vces 60Vceo 5.0V 750mA 625wW

Unit Weight: 206 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 70 V

Maximum DC Collector Current: 750 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.2 V