Central Semiconductor 2N5954 TIN/LEAD 双极晶体管 BJTs 90Vcbo 90Vcev 85Vcer 80Vceo 40W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 40 W

DC Current Gain hFE Max: 100 at 2 A, 4 V

Gain Bandwidth Product fT: 5 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 90 V

Continuous Collector Current: 6 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 2 A, 4 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V