Central Semiconductor 2N6486 PBFREE 双极型晶体管 NPN 50Vcbo 40Vceo 5.0Vebo

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.8 W

DC Current Gain hFE Max: 150 at 5 A, 4 V

Gain Bandwidth Product fT: 5 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 5 A, 4 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 3.5 V