Central Semiconductor BCY58-X TIN/LEAD 双极型晶体管 NPN 32Vcbo 7.0Vebo 100mA 340mW 1W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 340 mW

DC Current Gain hFE Max: 630 at 2 mA, 5 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 32 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100 at 10 uA, 5 V

Collector- Emitter Voltage VCEO Max: 32 V

Collector-Emitter Saturation Voltage: 350 mV