Central Semiconductor BU406 PBFREE 双极型晶体管 NPN 晶体管 400Vcbo 400Vces 200Vceo 60W

Unit Weight: 1.890 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 60 W

Gain Bandwidth Product fT: 10 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: 7 A

Maximum DC Collector Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 200 V

Collector-Emitter Saturation Voltage: 1 V