Central Semiconductor CDM22010-650 SL MOSFET

Vgs(th): 4 V

Vgs (Max): 30V

Gate Charge (Qg): 20nC

Power consumption: 2|156W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 650V

Continuous drain current: 10A

Input Capacitance (Ciss): 1168pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1Ohm

Drive Voltage (Max Rds On, Min Rds On): 10V