Central Semiconductor CDM22011-600LRFP SL MOSFET

Vgs(th): 4 V

Vgs (Max): 30V

Gate Charge (Qg): 23.05nC

Power consumption: 25W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 11A

Input Capacitance (Ciss): 763pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 360mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V