Central Semiconductor CDMSJ2204.7-650 SL MOSFETs 4.7A,650V 插孔式MOSFET N沟道超结 T/L

Fall Time: 31 ns

Rise Time: 30 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: N-Channel Super Junction Power MOSFET

Qg - Gate Charge: 9.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 22.5 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 49 ns

Id - Continuous Drain Current: 4.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5 S

Rds On - Drain-Source Resistance: 990 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V