Central Semiconductor CMPT5179 TR PBFREE 双极型晶体管 NPN 射频振荡器

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

Gain Bandwidth Product fT: 1.45 GHz

Emitter- Base Voltage VEBO: 2.5 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 400 mV