Central Semiconductor CTLDM3590 TR MOSFET

Vgs(th): 1 V

Vgs (Max): 8V

Gate Charge (Qg): 0.46nC

Power consumption: 125mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 160mA

Input Capacitance (Ciss): 9pF

Operating temperature range: -65 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 3Ohm

Drive Voltage (Max Rds On, Min Rds On): 1.2|4.5V