Central Semiconductor CTLDM8120-M621H TR MOSFET

Vgs(th): 1 V

Vgs (Max): 8V

Gate Charge (Qg): 3.56nC

Power consumption: 1.6W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 950mA

Input Capacitance (Ciss): 200pF

Operating temperature range: -65 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 150mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V