Central Semiconductor CXDM3069N TR PBFREE MOSFET

Vgs(th): 1.4 V

Vgs (Max): 12V

Gate Charge (Qg): 11nC

Power consumption: 1.2W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 6.9A

Input Capacitance (Ciss): 580pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 30mOhm

Drive Voltage (Max Rds On, Min Rds On): 2.5|10V