Central Semiconductor MPS650 TIN/LEAD 双极型晶体管 BJTs 60Vcbo 40Vceo 5.0Vebo 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 75 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 75 at 50 mA, 2 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 300 mV