Central Semiconductor MPSA06 TIN/LEAD 双极晶体管 BJTs 80Vcbo 80Vceo 4.0V 500mA 625mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100 at 10 mA, 1 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 250 mV