Central Semiconductor SE9405 TIN/LEAD 双极型晶体管 BJTs 80Vcbo 80Vceo 5.0Vebo 10A 100W

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 100 W

Gain Bandwidth Product fT: 1 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 10 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 750 at 1 A, 3 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 2 V