Comchip Technology CMS03P06T6-HF MOSFETs MOSFET N沟道 60VDS 20VGS 3.8A

Fall Time: 7.2 ns

Rise Time: 17 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6.4 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 104 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V