Comchip Technology CMSP2011A6-HF MOSFETs MOSFET P沟道 20VDS 12VGS 11A

Fall Time: 10 ns

Rise Time: 35 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 35 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 750 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 24 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V