Diodes Incorporated DMC4050SSD-13 MOSFETs MOSFET 漏极-源极击穿电压 (BVDSS)

Fall Time: 5.27 ns

Rise Time: 15.14 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 37.56 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2.14 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8.08 ns

Typical Turn-Off Delay Time: 24.29 ns

Id - Continuous Drain Current: 5.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 45 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V