Diodes Incorporated DMT2004UFV-7 MOSFETs MOSFET BVDSS：8V-24V

Technology: Si

Unit Weight: 30 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 53.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.3 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 70 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5 mOhms

Vds - Drain-Source Breakdown Voltage: 24 V

Vgs th - Gate-Source Threshold Voltage: 550 mV