Diodes Incorporated ZVN4525E6TA 场效应管 N沟道 250V

Width: 1.8 mm

Height: 1.3 mm

Length: 3.1 mm

Fall Time: 3.5 ns

Rise Time: 1.7 ns

Technology: Si

Unit Weight: 15 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 2.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.1 W

Vgs - Gate-Source Voltage: - 40 V, + 40 V

Typical Turn-On Delay Time: 1.25 ns

Typical Turn-Off Delay Time: 11.4 ns

Id - Continuous Drain Current: 230 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.3 S

Rds On - Drain-Source Resistance: 8.5 Ohms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 800 mV