Width: 3.3 mm
Height: 0.8 mm
Length: 3.3 mm
Fall Time: 2 ns, 4 ns
Rise Time: 2 ns, 5 ns
Technology: Si
Unit Weight: 207.730 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 19 nC, 60 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.6 W, 2 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 7 ns, 13 ns
Typical Turn-Off Delay Time: 20 ns, 38 ns
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 97 S, 231 S
Rds On - Drain-Source Resistance: 7.3 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
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