Infineon DF100R07W1H5FPB54BPSA2 SiC IGBT模块 650 V，100 A升压IGBT模块

Technology: SiC

Configuration: Dual

Mounting Style: Press Fit

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 40 A