Infineon DF100R07W1H5FPB54BPSA2 SiC IGBT模块 650 V，100 A升压IGBT模块
制造商Infineon(查看更多该品牌的产品)
ModelDF100R07W1H5FPB54BPSA2
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Technology: SiC
Configuration: Dual
Mounting Style: Press Fit
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.35 V
Continuous Collector Current at 25 C: 40 A
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