Infineon FF900R12IP4 IGBT模块 IGBT-MODULE

Width: 89 mm

Height: 38 mm

Length: 172 mm

Technology: Si

Unit Weight: 825 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 5.1 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 900 A