Infineon FP35R12W2T4 IGBT模块 IGBT-MODULE

Width: 62.8 mm

Height: 12 mm

Length: 56.7 mm

Technology: Si

Unit Weight: 39 g

Configuration: 3-Phase Inverter

Mounting Style: Screw Mount

Pd - Power Dissipation: 215 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 54 A