Infineon AUIRFP4568-E MOSFETs MOSFET_(120V 300V)

Width: 5.31 mm

Height: 20.7 mm

Length: 15.87 mm

Fall Time: 84 ns

Rise Time: 119 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 227 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 517 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 27 ns

Typical Turn-Off Delay Time: 47 ns

Id - Continuous Drain Current: 171 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 162 S

Rds On - Drain-Source Resistance: 5.9 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 5 V